U. B. Schallenberg, S. Jakobs, mso jena Mikroschichtoptik GmbH (Germany); W. Buß, Fraunhofer Institute for Applied Optics and Precision Engineering (Germany),
„Spectral-sensitive on-chip masking of Si-PIN-diodes using patterned and self-blocked optical coatings,“ in Optical and infrared Thin Films, Michael L. Fulton, Editor, Proceedings of SPIE Vol. 4094, 1-6 (2000)

Abstract:
The manufacturing processes for spectral-sensitive on-chip masking of Si-PIN-diodes using thin-film optical filters are described. As two examples, a diode array with red, green, and blue filters (RGB) and a UV-sensitive diode are explained in detail. The RGB-filters are made of TiO₂ thin-films and the UV-filter is a metal/dielectric multilayer using HfO₂, SiO₂, and Al thin-films. Both filter types are self-blocked over a wavelength range from 200 to 1100 nm. The optical coatings on the diodes are arranged as pixels with rhombic or rectangular shapes and with lateral dimensions of about 20 microns as minimum. The used lift-off technique for patterning the coatings is described briefly. Reactive e-beam evaporation with ion-assistance is used to deposit the optical coatings.